Analysis of Drain Induced Barrier Lowering for Double Gate MOSFET According to Channel Doping Concentration
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: The Journal of the Korean Institute of Information and Communication Engineering
سال: 2012
ISSN: 2234-4772
DOI: 10.6109/jkiice.2012.16.3.579